Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

摘要

Surface migration lengths of As adatoms on (411)A GaAs surfaces during molecular beam epitaxy were determined for the first time from lateral profiles of the arsenic content (x) in the GaAs_xP_1-x layers grown on GaAs channeled substrates (CSs) using As_4 and P_2 beams. The x on the (411)A side-slope region near the edge of the (100) region increased from that on the flat (411)A GaAs substrate, indicating that As adatoms flow from the (100) region to the (411)A side-slope region.