首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena >As_4 Pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of IN_0.08Ga_0.92As/GaAs superlattices on (411) A GaAs substrates
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As_4 Pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of IN_0.08Ga_0.92As/GaAs superlattices on (411) A GaAs substrates

机译:As_4在(411)A GaAs衬底上IN_0.08Ga_0.92As / GaAs超晶格分子束外延过程中铟原子表面偏析的压力依赖性

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摘要

As_4 pressure dependence of surface segregation f In atoms during molecular beam epitaxy (MBE) growth of pseudomorphic In_0.08Ga_0.92As/GaAs (7.5 nm/11.2 nm) superlattices (SLs) on (411) A GaAs substrates was investigated by high resolution x-ray diffraction (HRXRD) and 12 K Photoluminescence measurements.
机译:As_4表面偏析f In原子在(411)A衬底上的拟态In_0.08Ga_0.92As / GaAs(7.5 nm / 11.2 nm)超晶格(SLs)分子束外延(MBE)生长过程中,As原子的压力依赖性通过高分辨率x射线衍射(HRXRD)和12 K光致发光测量。

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