Comparison of Non-Equilibrium Green's Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation

摘要

In this paper, we present a comparative study between non-equilibrium Green's function and quantum-corrected Monte Carlo approaches for an ultra-short channel MOSFET. As a result, we have found that the both models are equivalent in the simulation of quantum transport in a nano-scale MOSFET. We will also demonstrate that impurity scattering in the source region and plasmon scattering at the drain-end of the channel especially influence the drain current based on the quantum-corrected Monte Carlo approach.