Schroedinger/Luttinger approach to scaled MOS transport for various crystal orientations and its experimental verifications

摘要

Schroedinger/Luttinger based approach to scaled MOS transport discussion has been first done for various kinds of crystal orientations, channel directions, applied voltages and mechanical stress together with experimental verifications. Typical output understandings through this work are as followed: (1) marked variations of inversion carrier distributions have been calculated among (110), (111), (120), (112) and (100) surfaces, (2) significant differences in channel conductivity of p-channel MOS have been simulated between triode and pentode regions, and (3) effective mass characteristics have been output as functions of germanium concentration.