Investigation of the nonlinearity properties of the DC Ⅰ-Ⅴ characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators

摘要

The DC Ⅰ-Ⅴ characteristics of metal-insulator-metal (MIM) tunnel diodes with double insulator layer is investigated by means of computer simulations. Simulation results on the properties of the diode characteristics such as resistance and quality factor are presented in various diagrams and the dependences on the different diode parameters are discussed. The simulations algorithm applied is also described in brief.