CMOS performance enhancement in Hybrid Orientation Technologies

摘要

Possible MOSFET performance enhancement by combining the hybrid-orientation technology (HOT) and process-induced local strain engineering is predicted for sub-45-nm CMOS technology nodes via technology CAD (TCAD) simulation. Mobility enhancements are modeled for both the hybrid orientation and process-induced local strain in CMOS technologies and are used in simulation. RF performance is investigated in detail and peak cutoff frequency, f_T of 524 GHz for n-MOSFETs and 239 GHz for p-MOSFETs are predicted from simulation.