A compact modelling of double-walled gate wrap around carbon nanotube array field effect transistors

摘要

The effects of multi-walled CNTs and array of channels are combined to form Double-walled Gate Wrap Around Carbon Nano Tube array Field Effect Transistor (DWGWA CNTFET). Numerical model is proposed for the device to study its performance. Screening and imaging effects of adjacent and inter walls in array of channels are included for calculating the drive capacitance, subsequently the drive current. This model suits for a wide range of chi-ralities and diameters. The change in drive capacitance of double-walled and single-walled device with respect to various drain and gate voltage for different values of number of channels, diameters are studied. The number of channels, CNTs diameters, chiralities of the tubes, source/drain length are varied and the corresponding responses of drive current, cut off frequency, signal delay time for both double and single walled devices are compared. In all cases, DWGWA CNTFET excels in its performance over Single-walled Gate Wrap Around Carbon Nano Tube array Field Effect Transistor (SWGWA CNTFET).The model of the proposed device can be utilized for designing the Nano devices with high power and high speed capability.