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首页> 外文期刊>Journal of Computational Electronics >Band transport and localised states in modelling the electric switching of chalcogenide materials
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Band transport and localised states in modelling the electric switching of chalcogenide materials

机译:硫族化物材料电开关建模中的能带传输和局部态

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摘要

The role of the extended (band) states in determining the electric switching of chalcogenide materials in the amorphous phase is here analysed by means of a theoretical/simulative approach which accounts for both mobile and localised states. This goal is accomplished by including a parabolic dispersion relation for the mobile states into a set of equations of the hydrodynamic type. Simulation results have been obtained for three chalcogenides particularly appealing for technological applications. Comparison is reported with available experimental results for nanometre devices. Furthermore, a comparative analysis of the outcomes of the present model with data from other theoretical approaches based on different physical assumptions is carried out.
机译:在此,通过理论/模拟方法分析了扩展(带)态在确定硫族化物材料在非晶态中的电转换中的作用,该理论/模拟方法考虑了移动态和局部态。通过将流动态的抛物线色散关系包含在一组流体动力学方程组中,可以实现该目标。对于三种硫属化物,已经获得了仿真结果,特别吸引了技术应用。据报道与纳米器件的可用实验结果进行了比较。此外,对本模型的结果与基于不同物理假设的其他理论方法的数据进行了比较分析。

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