Experimental Studies of Electronic Transport of Chalcogenide Glass Electrical Switches

摘要

The electrical conductivity, Seebeck coefficient, and Hall coefficient of 3 micron thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 sq cm/V sec at room temperature).