Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory

摘要

The snapback effect of amorphous chalcogenide materials has attracted a wide attention. But the mechanism of ovonic threshold switching is still controversial. And two-dimensional model can't simulate device with complicated boundaries. In this paper we developed a three-dimensional numerical model based on trap to band and in-band transition. The simulation results are compared with experimental data.