NONVOLATILE MEMORY WITH OVONLC THRESHOLD SWITCHES, CAPABLE OF PREVENTING CURRENT SPIKE FLOWING IN THE STORAGE UNIT OF A MEMORY CELL INCLUDING OTS(OVONIC THRESHOLD SWITCHES) SELECTOR

摘要

PURPOSE: A nonvolatile memory with OVONLC threshold switches is provided to prevent a malfunction by controlling a drain current through a current spike which is generated in a switch period of a selector.;CONSTITUTION: A plurality of memory cells are formed in a metrics(105) having a plurality of column and rows. Each memory cell comprises a storage unit(P) and a selector(S) for selecting the storage unit. A plurality of array lines comprises a plurality of row lines for selecting the row of the memory cell, and also comprises a plurality of column lines for selecting the column of the memory cell. A plurality of sets of local lines are combined with a plurality of array lines. The local line set is combined with a memory cell group corresponding to the array line. A plurality of selection device sets is combined with the local line set.;COPYRIGHT KIPO 2010