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Optimization Techniques for CNT Based VLSI Interconnects - A Review

机译:基于CNT的VLSI互连的优化技术-综述

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摘要

Interconnects plays an important role in integrated circuits. Copper is used as an interconnect material, but beyond 22 nm technology node it faces many problems due to grain boundary scattering, and therefore carbon nanotubes are the most promising future interconnect materials. Various techniques and approaches such as driver sizing, repeater sizing, repeater insertion, wire sizing, wire spacing, shielding, boos table repeater were used by various researchers. Many of these techniques can be utilized for future CNT based VLSI interconnects as well. This paper presents a detailed discussion on the techniques and approaches of past, present and future relevant for interconnects of VLSI circuits.
机译:互连在集成电路中起着重要作用。铜被用作互连材料,但是由于晶界散射,在22 nm技术节点之外,铜还面临许多问题,因此碳纳米管是未来最有希望的互连材料。各种研究人员使用了各种技术和方法,例如驱动程序大小,中继器大小,中继器插入,导线大小,导线间距,屏蔽,boos table中继器。这些技术中的许多技术也可以用于将来的基于CNT的VLSI互连。本文详细讨论了与VLSI电路互连相关的过去,现在和将来的技术和方法。

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