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Thin‐Film Thickness from Theoretical Expressions for Conductivity and Isothermal Hall Effect

机译:从电导率和等温霍尔效应的理论表达式得出的薄膜厚度

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摘要

Expressions for the electrical conductivity σ and the isothermal Hall coefficient AH are transcendental equations in terms of film thickness and are solved graphically for film thickness. Measurements on vacuum‐deposited gold films in the thickness range 150–500 Å are compared with thickness measurements based upon the multiple beam interferometer methods of Tolansky and upon thickness calculations from microgram weighings. The deviations in measured film thickness are relatively constant, having a value of 30 Å for films greater than 300 Å. This constant deviation can be eliminated if the electron mean free path in bulk material is 370 Å in place of the value given in the literature (410 Å).
机译:电导率σ和等温霍尔系数AH的表达式是关于膜厚的超越方程,并通过图形方式求解了膜厚。将厚度范围为150–500Å的真空沉积金膜的测量结果与基于Tolansky多光束干涉仪方法的厚度测量结果进行比较,并根据微克称重计算厚度。测得的薄膜厚度偏差相对恒定,大于300的薄膜的偏差为30。如果散装材料中的电子平均自由程为370而不是文献中给出的值(410),则可以消除此常数偏差。

著录项

  • 来源
    《Journal of Applied Physics 》 |1964年第10期| 共3页
  • 作者

    Leonard W. F.; Ramey R. L.;

  • 作者单位

    School of Engineering and Applied Science, University of Virginia, Charlottesville, Virginia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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