Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

摘要

InGaAs/GaAs strained layers superlattices have been grown by molecular beam epitaxy on GaAs. The best growth temperature was found to be 520–540 °C from photoluminescence measurements. Double x‐ray diffraction was performed. It shows very good agreement with the kinematical theory. This technique proves to be of particular interest for such structures: a single profile leads to reliable and complete information on layer thickness and InGaAs composition.