Elastic stress relaxation in buffer layers based on porous strained InGaAs/GaAs superlattices

摘要

Potential advantages of using relaxed porous InGaAs/GaAs superlattices as buffer layers are considered. The X-ray diffraction patterns and the photoluminescence spectra of multilayer epitaxial InGaAs/GaAs heterostructures upon electrochemical etching are indicative of a partial relaxation of elastic stresses in the component epilayers. The stress relaxation in porous superlattices, used as buffer layers on both porous GaAs and periodic single crystal heterostructures, provides for a small but still significant positive effect related to a decrease in elastic energy accumulated in the growing structure.