Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular‐beam epitaxy: Its effect on the device electrical characteristics

摘要

Owing to surface‐exchange reaction and diffusion of As and Ge species during crystal growth by molecular‐beam epitaxy, the electrical characteristics of n‐GaAs/p‐Ge heterojunctions are found to be affected significantly. The junctions grown at temperatures higher than 500 °C become thyristorlike npnp structures. The junctions grown below 500 °C exhibited normal current–voltage characteristics with the p junction apparently displaced into the Ge.