On the electrical behavior of V2O5/4H-SiC Schottky diodes

摘要

A complete analysis of the rectifying behavior of V2O5/4H-SiC (divanadium pentoxide/4H polytype of silicon carbide) junction is reported. The analysis of forward and reverse JD-VD curves of samples fabricated with 5?nm-thick V2O5 films shows that the carrier transport across junction is dominated by the field enhanced thermionic emission mechanism. All the physical and electrical parameters, such as Schottky barrier height, ideality factor, and series resistance, have been evaluated from temperature behavior of JD-VD curves in the range 100–425?K and from CD-VD measurements. It is shown that the barrier height extracted from measurements can be justified in terms of inhomogeneities localized at the interface.