机译:V_2O_5 / 4H-SiC肖特基二极管的电学行为
Department of Industrial Engineering, University of Salerno, Via Pome Don Melillo, 84084 Fisciano, Salerno, Italy;
Department of Industrial Engineering, University of Salerno, Via Pome Don Melillo, 84084 Fisciano, Salerno, Italy;
Department of Industrial Engineering, University of Salerno, Via Pome Don Melillo, 84084 Fisciano, Salerno, Italy;
机译:V2O5 / 4H-SiC肖特基二极管的电性能
机译:1 MeV Si〜+离子辐照的4H-SiC肖特基二极管的缺陷和电学行为
机译:快速电子辐照前后具有RuWO_x肖特基接触的4H-SiC肖特基二极管的电学特性
机译:基于4H-SIC高质量外延层的探测器肖特基二极管的电气性能
机译:散装氮化镓基肖特基二极管的制造和电气/光学特征
机译:具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
机译:高能电子辐照Ni / 4H-siC肖特基势垒二极管的电学特性