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机译:SiC基板上外延石墨烯场效应晶体管的电荷无关蛋白质吸附特性
Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;
Institute of Post LED Photonics Tokushima University Tokushima Tokushima 770-8506 Japan;
Institute of Post LED Photonics Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan;
Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan Graduate School of Technology Industrial and Social Sciences Tokushima University Tokushima Tokushima 770-8513 Japan;
Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan Graduate School of Technology Industrial and Social Sciences Tokushima University Tokushima Tokushima 770-8513 Japan;
机译:SiC衬底上双层外延石墨烯场效应晶体管的高温特性
机译:SiC衬底上晶圆级外延石墨烯上的石墨烯纳米带场效应晶体管
机译:SiC基板上外延双层石墨烯场效应晶体管的高温RF性能
机译:通过升华在6H-SiC底板上杂交型晶体管杂交型晶体管杂交生长
机译:砷化铝镓/砷化铟镓单量子阱调制掺杂的场效应晶体管结构的分子束外延生长和表征。
机译:乙烯化学气相沉积法生长压力对4H-SiC衬底上生长的外延石墨烯的影响
机译:石墨烯纳米带场效应晶体管在siC衬底上的晶圆级外延石墨烯上