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Charge-independent protein adsorption characteristics of epitaxial graphene field-effect transistor on SiC substrate

机译:SiC基板上外延石墨烯场效应晶体管的电荷无关蛋白质吸附特性

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摘要

Charge-independent biomolecule detection using field-effect transistors (FETs) with single-crystal and large-area epitaxial graphene films fabricated on SiC substrates is demonstrated. To obtain clean graphene channel surfaces,FETs were fabricated using stencil mask lithography,which is a resist-free fabrication process. Proteins with various isoelectric points (pI: 5.6-9.9) were used as targets. Transfer characteristics [drain current (I_D) vs solution-gate voltage (V_G) characteristics] were measured by changing the pH of the buffer solution. The I_D-V_G characteristics exhibited a clear negative gate voltage shift for both positively and negatively charged proteins,indicating that the epitaxial graphene FETs could not detect the charge type of the protein and electrons were doped by the adsorption of both positively and negatively charged proteins. These results cannot be explained by conventional electrostatic effects. Therefore,it can be concluded that the detection of biomolecules by the epitaxial graphene FETs occurred through charge transfer from the proteins. Moreover,the dissociation constants between the proteins and epitaxial graphene films were as small as 100 pM,indicating the high sensitivity of the graphene FETs.
机译:对使用在SiC基板上制造的单晶和大面积外延石墨烯薄膜使用场效应晶体管(FET)的电荷无关的生物分子检测。为了获得清洁的石墨烯通道表面,使用模板掩模光刻制造FET,其是无抗抗性制造过程。用各种等电点(PI:5.6-9.9)用作靶标。通过改变缓冲溶液的pH来测量通过改变缓冲溶液的pH来测量通过改变缓冲溶液的pH来测量的传递特性[漏极电流(i_d)与溶液栅极电压(V_g)特性。 I_D-V_G特性表现出阳性和带负电荷的蛋白质的明显负栅极电压移位,表明外延石墨烯FET不能检测到蛋白质的充电类型,并且通过阳性和带负电荷的蛋白质的吸附来掺杂蛋白质和电子。这些结果不能通过传统的静电效应来解释。因此,可以得出结论:通过从蛋白质的电荷转移发生外延石墨烯FET的生物分子检测。此外,蛋白质和外延石墨烯薄膜之间的解离常数小至100μm,表示石墨烯FET的高灵敏度。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|074502.1-074502.8|共8页
  • 作者单位

    Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Advanced Technology and Science Tokushima University Tokushima Tokushima 770-8506 Japan;

    Institute of Post LED Photonics Tokushima University Tokushima Tokushima 770-8506 Japan;

    Institute of Post LED Photonics Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan;

    Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan Graduate School of Technology Industrial and Social Sciences Tokushima University Tokushima Tokushima 770-8513 Japan;

    Graduate School of Sciences and Technology for Innovation Tokushima University Tokushima Tokushima 770-8506 Japan Graduate School of Technology Industrial and Social Sciences Tokushima University Tokushima Tokushima 770-8513 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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