Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates a

摘要

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ～10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ～0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.