Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

摘要

Quasi-free-standing epitaxial graphene grown on wide band gap semiconductor SiC demonstrates high carrier mobility and good material uniformity, which make it promising for graphene-based electronic devices. In this work, quasi-free-standing bilayer epitaxial graphene is prepared and its transistors with gate lengths of 100nm and 200 nm are fabricated and characterized. The 100nm gate length graphene transistor shows improved DC and RF performances including a maximum current density I_(ds) of 4.2 A/mm, and a peak transconductance g_m of 2880 mS/mm. Intrinsic current-gain cutoff frequency f_T of 407 GHz is obtained. The exciting DC and RF performances obtained in the quasi-free-standing bilayer epitaxial graphene transistor show the great application potential of this material system.