High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

著录项

• 来源
  《中国物理：英文版》 |2016年第6期|463-467|共5页
• 作者

  Ze-Zhao He; Ke-Wu Yang; Cui Yu; Qing-Bin Liu; Jing-Jing Wang; Jia Li; Wei-Li Lu;

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• 作者单位

  School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;

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• 原文格式 PDF
• 正文语种 eng
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