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Hollow cathode effect modified time-dependent global model and high-power impulse magnetron sputtering discharge and transport in cylindrical cathode

机译:空心阴极效果改性时间依赖的全局模型和高功率脉冲磁控溅射和圆柱形阴极的运输

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摘要

High-power impulse magnetron sputtering boasts high ionization, large coating density, and good film adhesion but suffers from drawbacks such as low deposition rates, unstable discharge, and different ionization rates for different materials. Herein, a cylindrical cathode in which the special cathode shape introduces the hollow cathode effect to enhance the discharge is described. To study the discharge performance of the cylindrical cathode, a hollow cathode effect modified time-dependent global model is established to fit the discharge current pulses. The simulation results indicate that the cylindrical cathode has relatively large Hall parameters of 24 (700 V) to 26 (1000 V). Compared to the planar cathode, the cylindrical cathode has a larger plasma density as a result of the hollow cathode effect. In addition, the ionization rate and ion return probability increase by about 3.0% and 4.3%, respectively. Particle transport derived from the plasma diffusion model shows that the magnetic field enables further diffusion of ions than atoms, resulting in nearly pure ion deposition on the substrate. The deposition rate and ion current measured experimentally support the simulation model and results, and this model provides a universal platform to simulate plasma systems with similar structures. Published under license by AIP Publishing.
机译:高功率脉冲磁控溅射具有高电离,大涂层密度和良好的薄膜粘附,但缺口,例如低沉积速率,不稳定的放电和不同材料的不同电离速率。这里,描述了一种圆柱形阴极,其中特殊的阴极形状引入中空阴极效应以增强放电。为了研究圆柱形阴极的放电性能,建立了修改了时间依赖的全局模型的中空阴极效应以适合放电电流脉冲。仿真结果表明,圆柱形阴极具有24(700V)至26(1000V)的相对大的霍尔参数。与平面阴极相比,圆柱形阴极由于中空阴极效应而具有较大的等离子体密度。此外,电离率和离子返回概率分别增加约3.0%和4.3%。源自等离子体扩散模型的颗粒传输表明,磁场能够进一步扩散离子而不是原子,导致基板上几乎纯的离子沉积。测量的沉积速率和离子电流实验支持模拟模型和结果,并且该模型提供了一种通用平台,用于模拟具有相似结构的等离子体系统。通过AIP发布在许可证下发布。

著录项

  • 来源
    《Journal of Applied Physics》 |2019年第6期|063302.1-063302.14|共14页
  • 作者单位

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China|Univ Hong Kong Dept Phys Kowloon Hong Kong Peoples R China|Univ Hong Kong Dept Mat Sci & Engn Kowloon Hong Kong Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Univ Hong Kong Dept Phys Kowloon Hong Kong Peoples R China|Univ Hong Kong Dept Mat Sci & Engn Kowloon Hong Kong Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Peking Univ Shenzhen Grad Sch Sch Adv Mat Shenzhen 518055 Peoples R China;

    Univ Hong Kong Dept Phys Kowloon Hong Kong Peoples R China|Univ Hong Kong Dept Mat Sci & Engn Kowloon Hong Kong Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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