HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS AND METHODS OF FORMING HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS

摘要

Title: HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS AND METHODS OF FORMING HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS[err] Abstract: The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns and subsequently subjected to deep drawing. The invention includes three-dimensional sputtering targets comprising materials containing at least one element selected from Cu, Ti, and Ta. The target has an average grain size of from about 0.2 microns to about 30 microns throughout the target and a grain size standard deviation of less than or equal to 15% (1-(Y). The invention includes three-dimensional targets comprising Al, having an average grain size of from 0.2 microns to less than 150 micron, with a grain size standard deviation of less than or equal to 15% (1-6).