Theoretical investigation of 1.3 μm dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers

摘要

The threshold characteristic and output power of 1.3 μm quantum dot (QD) vertical-cavity surface-emitting laser (VCSEL) with dots-under-a-well and dots-in-a-well InAs/GaAs QD structures are investigated by using rate equation model and output power model. The influence of VCSEL and QD structures on the modal gain of VCSEL is analyzed. Threshold current density, quantum efficiency, and characteristic temperature are simulated for different QD structures. The dependence of output power of 1.3 μm QD VCSEL on the QD structure, threshold current, quantum efficiency, and oxide-aperture size is investigated in detail.