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机译:1.3-μμmp掺杂InAs-GaAs量子点垂直腔面发射激光器的温度特性
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore;
III-V semiconductors; current density; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; quantum dot lasers; surface emitting lasers; thermal analysis; thermo-optical devices; InAs-GaAs; QD VCSEL mode active region; QD wetting layer; carrier confinement; laser gain wavelength; power 0.74 mW; quantum-dot vertical-cavity surface-emitting laser; self-consistent rate equation; size 1.3 mum; temperature 293 K to 298 K; temperature characteristics; thermal conduction model; Characteristic temperature; quantum-dot (QD) laser; self-heating; vertical-cavity surface-emitting lasers (VCSELs);
机译:1.3- / splμm/ m InAs-InGaAs量子点垂直腔面发射激光器,由MBE所生长的全掺杂DBR
机译:InGaAs亚单层量子点和InAs量子点光子晶体垂直腔面发射激光器的特性
机译:1.3-μmGaAs基氧化物限制的(InGa)As-GaAs量子点垂直腔面发射激光器的阈值操作建模
机译:GaAs基1.3- / splμ/ m量子点(InGa)As / GaAs垂直腔面发射激光器室温连续波操作的三维综合自洽仿真
机译:高功率,高带宽,高温长波长垂直腔面发射激光器。
机译:1.3μmInAs / GaAs自组装量子点激光器的热效应和小信号调制
机译:高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器,具有极低的连续波室温阈值电流 ud