Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination

摘要

We report magnetotransport measurements performed on AIGaN/GaN devices with different buffer layers. Standard samples with a 1 μm thick GaN buffer show a linear Hall resistance and an almost constant magnetoresistance, as expected from a single two-dimensional electron gas (2DEG) at the AIGaN/GaN interface. Other samples, with an Al_xGa_(1-x)N buffer (x = 5℃) and a buried linear aluminium gradient, have an additional three-dimensional electron slab (3DES) close to the GaN substrate. In this case, the Hall resistance is strongly non-linear and presents an incorrect hole-type carrier signature, evidenced by low field mobility spectrum analysis. This effect is strengthened when the 3D layer, parallel to the mesa-eT_ched 2DEG, is infinite. We suggest that the misplacement of the electrical contacts in the 3DES, i.e., far from the sample edges, could explain the wrong carrier type determination.