Traps signature in steady state current-voltage characteristics of organic diode

摘要

Traps cause distortion in current-voltage (Ⅰ - Ⅴ) characteristics of an organic diode due to their voltage dependent occupancy. The present work describes a technique that uses the change in slope of Ⅰ - Ⅴ characteristics due to increased filling of traps to create a sharply defined peak that allows ready visualization of presence of traps even when their direct impact on Ⅰ - Ⅴ is not clearly evident. It is also shown that the signatures of exponential and single/Gaussian traps are significantly different thereby allowing them to be easily differentiated. Simulation and experimental results with P3HT and P3HT:PCBM diodes are presented that highlight the usefulness of the proposed technique.