Double - semiconductor diode with partially negative current-voltage characteristic and a method for producing

• 1. 制造具有非晶态、部分非晶态或细晶微结构的扁钢产品的方法及具有此特性的扁钢产品 [P] . 中国专利： CN105143491B . 2016.12.14
• 2. 制造具有非晶态、部分非晶态或细晶微结构的扁钢产品的方法及具有此特性的扁钢产品 [P] . 中国专利： CN105143491A . 2015-12-09
• 3. A semiconductor device with a partially negative current-voltage characteristic, in particular switching diode [P] . 德国专利： DE1079212B . 1960-04-07

  机译： 具有部分负的电流-电压特性的半导体器件，特别是开关二极管

• 4. Semiconductor component with a partially negative current-voltage characteristic and a half conductor body with four zones, as well as a method for producing [P] . 德国专利： DE1213925B . 1966-04-07

  机译： 具有部分负电流电压特性和具有四个区域的半导体的半导体组件及其制造方法

• 5. Controllable semiconductor devices with a negative current-voltage characteristic and method of their manufacture [P] . 美国专利： US3321680A . 1967-05-23

  机译： 具有负电流-电压特性的可控半导体器件及其制造方法

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• 5. Influence of semiconductor barrier tunneling on the current-voltage characteristics of tunnel metal-oxide-semiconductor diodes [O] . Nielsen Otto M. 1983

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• 2. Simulation Analysis of Flow Characteristics in the Vortex Diode with Double Tangential Tube [J] . Lijun Zhang ,Yuelai Dai ,Yulei Li . 建模与仿真（英文） . 2017,第3期
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• 4. Diagnostic Validity of Cica Beta Test 1 for the Detection of Extended Spectrum Beta-Lactamase (ESBL) Producing Gram Negative Bacteria by Comparing with Phenotypic Method [J] . Mostaqimur Rahman ,Hafiza Sultana ,Abdullahil Mosawuir . 传染病进展（英文） . 2019,第1期
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