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机译:X射线对4H-SiC(0001)上生长的外延石墨烯中的氧嵌入的新见解
Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland;
Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland,Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland;
机译:在4H-SiC上生长和H嵌入的外延石墨烯中,载流子迁移率随温度的变化
机译:通过氢嵌入来调节外延石墨烯/ 4H-SiC(0001)的肖特基势垒
机译:控制4H-SiC(0001)上外延石墨烯的厚度以及通过氢嵌入去除缓冲层
机译:控制4H-SiC(0001)上外延石墨烯的厚度以及通过氢嵌入去除缓冲层
机译:碳化硅上原始,插层和功能化外延石墨烯的同步X射线研究(0001)。
机译:在离轴4H-SiC上生长的外延石墨烯的纳米级结构表征(0001)
机译:扫描隧道在纳米脊中诱导原子尺度运动 在4H-siC(0001)上生长的外延石墨烯的显微镜