首页> 外国专利> MANUFACTURING METHOD OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE SUBSTRATE GROWN GRAPHENE, AND MANUFACTURING APPARATUS OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE

MANUFACTURING METHOD OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE, CATALYST-FREE SUBSTRATE GROWN GRAPHENE, AND MANUFACTURING APPARATUS OF CATALYST-FREE SUBSTRATE GROWN GRAPHENE

机译:无催化剂基质生长石墨烯的制造方法,无催化剂基质生长石墨烯的制造装置以及制造装置

摘要

Provided is a manufacturing method of catalyst-free substrate grown graphene. More specifically, provided is a manufacturing method of catalyst-free substrate grown graphene, comprising the following steps: (a) preparing a substrate on which a substrate layer is formed; (b) supplying carbon-containing gas and conducting metal organic chemical vapor deposition (MOCVD); and (c) growing graphene on the substrate layer without comprising a catalyst layer.;COPYRIGHT KIPO 2016
机译:提供了一种无催化剂的衬底生长石墨烯的制造方法。更具体地说,提供了一种无催化剂的衬底生长的石墨烯的制造方法,其包括以下步骤:(a)制备在其上形成衬底层的衬底; (b)供应含碳气体并进行金属有机化学气相沉积(MOCVD); (c)在不包含催化剂层的情况下在基底层上生长石墨烯。; COPYRIGHT KIPO 2016

著录项

  • 公开/公告号KR20160085421A

    专利类型

  • 公开/公告日2016-07-18

    原文格式PDF

  • 申请/专利权人 LEE YOUN TEK;

    申请/专利号KR20150002377

  • 发明设计人 LEE YOUN TEKKR;

    申请日2015-01-08

  • 分类号C01B31/04;

  • 国家 KR

  • 入库时间 2022-08-21 14:13:54

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