Comparison of Various Methods for Transferring Graphene and Few Layer Graphene Grown by Chemical Vapor Deposition to an Insulating SiO_2/Si Substrate

摘要

The objective of this study is to compare the results of transferring graphene and few layer graphene (FKG) up to 5 nm thick, grown by chemical vapor deposition (CVD) at a reduced pressure to a SiO_2/Si substrate using four different polymer films. The chosen transfer methods are based on the most promising (according to published data) materials: polymethyl methacrylate, polydimethylsiloxane, thermoscotch, and polycarbonate. It is shown that the most promising transfer method (minimum resistance and maximum carrier mobility) lies in the use of polycarbonate thin films with their dissolution in chloroform. In this case, the following parameters are steadily obtained: the graphene and FLG resistance is 250–900 Ω/□ and the carrier mobility is 900–2500 cm~2/(V s).