Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

摘要

We propose a simple method to evaluate the triple quantum dots (TQDs) coupled in series with the compact device structure. Compact coupled quantum dots, each with an attached control gate, offer promising applications as quantum computing and single-electron transfer devices. However, device reduction required in practical applications creates a capacitive cross-talk between a control gate and its neighboring dots making it difficult to determine the charge transition boundaries in each dot. To properly evaluate the electron-transfer characteristics of TQDs, a method is proposed whereby the three gate voltages are simultaneously swept. We studied the charge stability diagram of the compact TQDs using Monte Carlo simulations, and confirmed the effectiveness of the method. Compact Si-TQDs were actually fabricated by the use of pattern-dependent oxidation and additional oxidation method for this study. The method was then applied to the stability diagrams obtained from the devices. The nine measurements of the gate capacitances between the three sets of dots and gates were reproduced, confirming the formation of the TQDs.