机译:直接带隙硅光子学中碳化锗的能带结构
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Rigetti Quantum Computing, 775 Heinz Avenue, Berkeley, California 94710, USA;
Honeywell UOP, Des Plaines, Illinois 60016, USA;
Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Chemistry, Syracuse University, Syracuse, New York 13244, USA;
Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA;
机译:在带反转微带线光子带隙(PBG)结构的高电阻硅上实现Ku带阻滤波器
机译:Si,Ge / Si和硅绝缘子上锗(GeOI)衬底上以1.3 n波段发射的InAs / GaAs量子点在硅光子学上的生长
机译:沉积和衬底可调光子带隙在氢化非晶碳化硅薄膜的光学响应中的作用
机译:直接带隙光子学中碳化锗的能带结构
机译:硅/硅(1-y)碳(y)和硅/硅(1-x-y)锗(x)碳(y)异质结构的能带工程及其在PNP异质结双极晶体管(碳化硅,碳化硅锗)中的应用。
机译:硅基硅锗锗异质结构光子学
机译:基于多孔硅的介电镜全向光子带隙研究:光学厚度和物理厚度的影响