Growth of Highly Conformal TiC_x Films Using Atomic Layer Deposition Technique

摘要

TiC_x films were deposited by atomic layer deposition using tetrakis-neopentyl-titanium [Ti(CH_2C(CH_3)_3)_4] and H_2 plasma as the precursor and reactant, respectively. The growth of the rock-saltnstructured TiC_x films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was -0.52 and the film resistivity was as low as ~600 μΩ cm with a high density of 4.41 g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25 nm) with an aspect ratio of ~4.5.