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PL properties and defects of SnS layers based on n-type buffer layers/p-type SnS structures

机译:基于n型缓冲层/ p型SnS结构的SnS层的PL特性和缺陷

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摘要

The defect-related levels of n-type CdS/p-type SnS layers with thermal annealing were investigated through photoluminescence (PL) measurement. The SnS layer exhibited PL band at 1.13 eV. Based on the PL spectra observed at various excitation intensities and temperatures, PL peaks were attributed to donor to valence band transitions. Activation energy of donors in SnS was estimated to be 46 meV. The donor corresponding to the activation energy was due to interstitial Cadmium (Cdi). Based on these data, a schematic diagram of several defects was created for post-annealed CdS/SnS. (c) 2019 The Japan Society of Applied Physics
机译:通过光致发光(PL)测量研究了n型CdS / p型SnS层与热退火的缺陷相关水平。 SnS层在1.13eV处显示PL带。基于在各种激发强度和温度下观察到的PL光谱,PL峰归因于给体到价带跃迁。 SnS中供体的活化能估计为46 meV。对应于活化能的施主是由于间质镉(Cdi)。基于这些数据,为退火后的CdS / SnS创建了几个缺陷的示意图。 (c)2019日本应用物理学会

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