High-Sensitive Ultrathin Negative Electron Beam Resist Based on Langmuir-Blodgett Films of Polycyanoacrylate

摘要

We carried out an electron-beam lithography study of the sub-μm performances of Langmuir-Blodgett films of Polycyano-acrylates fabricated by the Langmuir-Schaefer technique. We tested the sensitivity of films made by 48 monolayers, finding a dose of less than 1 μC/cm~2, and employed them as masks for wet etching of Cr metal layers, with resolutions up to 100nm. These results suggest that the modified Langmuir-Schaefer technique, and the Polycyanoacrylate-based resists, are very promising for nanotechnology applications.