Observation of Exciton Transition in 1.3-1.55 μm Band from Single InAs/InP Quantum Dots in Mesa Structure

摘要

Single InAs/InP quantum dots from the O-band (1.3 μm) to the C-band (1.55 μm) were produced in order to realize a quantum information device for optical telecommunication. Our single quantum dot in any band has a sharp and discrete exciton line. To obtain quantum dots with intensive emissions, we applied a 'double-cap' growth technique to metalorganic chemical vapor deposition. To lower fabrication damage to quantum dots, we employed photolithography and wet chemical etching for fabricating 140-nm mesa structure with a quantum dot. Combination of the growth and the fabrication techniques is essential to the good optical property.