Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots

摘要

Single InAs quantum dots grown on an InP vicinal substrate are studied using polarized microphotoluminescence. The study of electron-hole exchange energy splitting reveals that the energy splitting is influenced by quantum confinement. The biexciton binding energies found for single dots grown on the vicinal substrate (around 2.4 meV) are high as compared to those of dots grown on an InP(001) substrate and this is attributed to a difference in spatial confinement. Moreover, the quantum dot size is shown to influence directly the biexciton binding energy.