Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)

摘要

In this study, the electrical and structural characteristics of Gd_2O_3 gate dielectrics with an epitaxial Si_3N_4 interfacial layer grown on Si(111) were investigated. Compared with control Gd_2O_3 gate dielectrics deposited on HF-last treated Si (111), the Gd_2O_3 gate dielectrics with an epitaxial Si_3N_4 interfacial layer exhibited excellent electrical characteristics such as low leakage current density and low interface state density. These characteristics are due to a high-quality interfacial layer formation on Si. Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy were employed to analyze the structures of the gate dielectrics and interfacial layer. High-k gate dielectrics with an epitaxial Si_3N_4 interfacial layer have considerable potential for future use in sub-0.1 μm metal oxide semiconductor field-effect transistors (MOSFETs).