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Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer
Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer
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机译:具有界面层和界面层上方的高K介电层的栅极介电层
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摘要
A semiconductor device includes a substrate having a first active region, a first gate structure over the first active region, wherein the first gate structure includes a first interfacial layer having a convex top surface, a first high-k dielectric over the first interfacial layer, and a first gate electrode over the first high-k dielectric.
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