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Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
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机译:栅电极和高k介电层的界面层及其制造方法
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摘要
Method of fabricating a semiconductor device. The semiconductor device comprises a substrate, a high-k gate dielectric layer formed on the substrate, and a hydrogen-free gate electrode deposited on the high-k gate dielectric layer wherein the hydrogen-free gate electrode is conductive. The method comprises depositing the high-k gate dielectric layer on the substrate, sputtering the gate electrode on the gate dielectric layer and treating the gate electrode such that the gate electrode is conductive.
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