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Preparation of Carbon Films by Hot-Filament-Assisted Sputtering for Field Emission Cathode

机译:热丝辅助溅射制备碳膜的场发射阴极

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Carbon thin films on a silicon substrate were prepared by DC magnetron sputtering method with a tungsten hot filament. In order to investigate the effects of the hot filament on film properties, the carbon thin films were characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and electron emission measurements. The tungsten atoms were evaporated from the hot filament and incorporated in the carbon film. The field emission measurement showed that the incorporation of tungsten was effective in reducing the turn-on voltage. The value of the turn-on voltage was 3.0 V/μm for the sample prepared with a tungsten filament heated at the temperature of 2000℃. The intentional insertion of a tungsten layer between the carbon film and the substrate was effective in obtaining a carbon film with a low turn-on voltage for the field emission.
机译:硅衬底上的碳薄膜是通过直流磁控溅射法用钨丝制成的。为了研究热丝对薄膜性能的影响,通过X射线光电子能谱(XPS),扫描电子显微镜(SEM)和电子发射测量对碳薄膜进行了表征。钨原子从热丝中蒸发,并结合到碳膜中。场发射测量表明,掺入钨可有效降低导通电压。对于在2000℃下加热的钨丝制备的样品,开启电压值为3.0 V /μm。在碳膜和衬底之间有意插入钨层对于获得具有低的用于场发射的开启电压的碳膜是有效的。

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