A New Approach of Polycrystalline Silicon Film on Plastic Substrate Prepared by Ion Beam Deposition Followed by Excimer Laser Crystallization at Room Temperature

摘要

In this work, we propose a new polycrystalline silicon (poly-Si) film of large grain for thin film transistor on flexible substrate. Thin films of amorphous silicon were deposited on plastic substrate by using ion beam deposition (IBD) and crystallized by excimer laser annealing. The entire process was carried out at room temperature. Si film formed by IBD has much lower impurity such as Ar, O, and H than that deposited by conventional sputtering method. This high purity of Si film makes large grain size (0.5 μm) and shows high endurance of excimer laser energy both on quartz and plastic substrate for flexible active matrix organic light emitting diode (AMOLED).