An Accurate and Computationally Efficient Method for Device Simulation with Scattering in Nanoscale Double-Gate Metal-Oxide-Semiconductor Transistors

摘要

An accurate and computationally efficient simulation method for quantum-mechanically treating dissipative electron transport in nanoscale double-gate metal-oxide-semiconductor field-effect transistors (DG MOSFETs) has been described. Within the nonequilibrium Green function formalism (NEGF), scattering can be simply treated on the base of Buettiker probes. The probe strength is related to the low-field mobility, which depends on the electron subband and longitudinal position. Therefore, the low-field mobility for every subband at every position along the channel has been calculated using the eigenenergies and wavefunctions along the confinement direction and the Fermi level along the channel per self-consistent loop. As a result, the effect of scattering can be rigorously treated under the NEGF formalism.