p-InGaN-GaN Vertical Conducting Diodes on n~+-SiC Substrate for High Power Electronic Device Applications

摘要

We have investigated the current-voltage (Ⅰ-Ⅴ) characteristics of p-InGaN/w-GaN vertical conducting diodes grown on n~+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) of 250 V was obtained with a low on-state resistance (R_(on)) of 1.28mΩcm~2 when the n-GaN layer thickness was increased to 1800 nm, leading to the high figure-of-merit, (V_B)~2/R_(on), of 49MW/cm~2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These Ⅰ-Ⅴ characteristics are preferable for high-power and high-temperature electronic device applications.