Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal-Oxide-Semiconductor Field-Effect Transistor

摘要

In this study, a novel termination is designed in a low-voltage N-channel trench power metal-oxide-semiconductor field-effect transistor (MOSFET) to simplify the fabricating process. In a conventional trench power-MOSFET (PowerMOS), a field oxide with a m