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Pad Characterization And Experimental Analysis Of Pad Wear Effect On Material Removal Uniformity In Chemical Mechanical Polishing

机译:化学机械抛光中垫的特性及垫磨损对材料去除均匀性影响的实验分析

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In this study, we investigated the effects of pad wear on the nonuniformity of material removal in chemical mechanical polishing (CMP). In order to verify the mechanical aspect of the material removal mechanism, pad characterization was conducted. Pad conditioning plays a key role in obtaining stable material removal during polishing. However, the polishing pad is gradually worn as conditioning proceeds during CMP. The pad profile was measured using the contact profile measuring system to analyze pad wear after each polishing run. From experimental results, the within wafer nonuniformity (WIWNU) was unstable at the initial polishing run because of the first wafer effect. In addition, the WIWNU deteriorated as determined from a polishing pad worn by conditioning. Therefore, pad wear has a significant effect on the nonuniformity of material removal in CMP.
机译:在这项研究中,我们调查了垫磨损对化学机械抛光(CMP)中材料去除不均匀性的影响。为了验证材料去除机制的机械方面,进行了焊盘表征。抛光垫调理在抛光过程中获得稳定的材料去除方面起着关键作用。然而,随着在CMP期间进行调节,抛光垫逐渐磨损。使用接触轮廓测量系统测量垫轮廓,以分析每次抛光运行后的垫磨损。根据实验结果,由于第一个晶片效应,晶片内部不均匀性(WIWNU)在初始抛光过程中不稳定。另外,如通过修整磨损的抛光垫所确定的那样,WIWNU劣化。因此,垫磨损对CMP中材料去除的不均匀性有重大影响。

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