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CHEMICAL MECHANICAL POLISHING PADS HAVING OFFSET CIRCUMFERENTIAL GROOVES FOR IMPROVED REMOVAL RATE AND POLISHING UNIFORMITY
CHEMICAL MECHANICAL POLISHING PADS HAVING OFFSET CIRCUMFERENTIAL GROOVES FOR IMPROVED REMOVAL RATE AND POLISHING UNIFORMITY
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机译:具有偏置周向凹槽的化学机械抛光垫,可提高去除率并抛光均匀性
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摘要
The present invention provides a chemical mechanical (CMP) polishing pad for planarizing at least one of semiconductor, optical and magnetic substrates comprising a polishing layer that has a geometric center, and in the polishing layer a plurality of offset circumferential grooves, such as circular or polygonal grooves, which have a plurality of geometric centers and not a common geometric center. In the polishing layer of the present invention, each circumferential groove is set apart a pitch distance from its nearest or adjacent circumferential groove or grooves; for example, the pitch increases on the half or hemisphere of the polishing layer that is farthest from the geometric center of its innermost circumferential groove and decreases on the half of the polishing layer nearest that geometric center. Preferably, the polishing layer contains an outermost circumferential groove that is complete and continuous.
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