CHEMICAL MECHANICAL POLISHING PADS HAVING OFFSET CIRCUMFERENTIAL GROOVES FOR IMPROVED REMOVAL RATE AND POLISHING UNIFORMITY

摘要

The present invention relates to a chemical mechanical (CMP) polishing pad for flattening at least one of semiconductor, optical, and magnetic substrates. The polishing pad includes a polishing layer having a geometric center. In the polishing layer, a polishing layer offset circumferential grooves such as circular or polygonal grooves have a plurality of geometric centers that are not common. In the polishing layer of the present invention, each circumferential groove is at a predetermined pitch distance from grooves or circumferential grooves adjacent or most adjacent. For example, the pitch is increased on a hemisphere or half of the polishing layer the farthest from the geometric center of the innermost circumferential groove and decreases on half of the polishing layer closest to the geometric center. Preferably, the polishing layer includes the outermost circumferential groove that is complete and continuous.